In this Microwave Journal technical article, Gabriele Devita (EnSilica) explains why the transition to FinFET process technology is essential for high-performance MIMO (multiple-input multiple-output) RF systems — including terrestrial 5G and satellite communications — and what analog IC designers must do differently to succeed with it. FinFETs, with their 3-dimensional transistor structure, offer improved control, higher current density, and excellent RF performance compared to traditional planar CMOS, enabling the integration of complex digital radios with efficient RF front-ends. However, this technology also introduces unique design challenges for analog circuitry.
Devita outlines seven key recommendations to ease this transition, including maintaining uniform device dimensions, designing repeatable layout patterns, early estimation of interconnect parasitics, leveraging digital calibration to correct analog imperfections, accounting for current density limitations in outputs, managing high flicker noise corner frequency, and adapting simulation strategies for more complex FinFET models. These practical guidelines help analog designers achieve high-performance FinFET ASICs for next-generation multi-antenna systems while mitigating common pitfalls of moving to advanced transistor architectures.
Read the full article on Microwave Journal: https://www.microwavejournal.com/articles/41757-mimo-needs-finfet-key-changes-for-analog-designers/
